View IS25LD512_4835322.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 1 features ? single power supply operation - low voltage range: 2.3 v ? 3.6 v ? memory organization - IS25LD512: 64k x 8 (512 kbit) - is25ld010: 128k x 8 (1 mbit) - is25ld020: 256k x 8 (2 mbit) ? cost effective sector/block architecture - 512kb : uniform 4kbyte sectors / two uniform 32kbyte blocks - 1mb : uniform 4kbyte sectors / four uniform 32kbyte blocks - 2mb : uniform 4kbyte sectors / four uniform 64kbyte blocks ? low standby current 1ua (typ) ? serial peripheral interface (spi) compatible - supports single- or dual-output - supports spi modes 0 and 3 - maximum 33 mhz clock rate for normal read - maximum 100 mhz clock rate for fast read ? page program (up to 256 bytes) operation - typical 2 ms per page program ? sector, block or chip erase operation - maximum 10 ms sector , block or chip erase ? low power consumption - typical 10 ma active read current - typical 15 ma program/erase current ? hardware write protection - protect and unprotect the device from write operation by write protect (wp#) pin ? software write protection - the block protect (bp2, bp1, bp0) bits allow partial or entire memory to be configured as read- only ? high product endurance - guaranteed 200,000 program/erase cycles per single sector - minimum 20 years data retention ? industrial standard pin-out and package - 8-pin 150mil soic - 8-pin vvsop - 8-contact wson - 8-pin tssop - 8-pin uson - lead-free (pb-free) package ? security function - build in safe guard function and sector unlock function to make the flash robust (appendix1&2) general description the IS25LD512/010/020 are 512kbit/ 1mbit / 2mbit serial pe ripheral interface (spi) flash memories, providing single- or dual-output. the devices are designed to support a 33 mhz clock rate in normal read mode, and 100 mhz in fast read, the fastest in t he industry. the devices use a single low voltage power supply, wide operating voltage ranging from 2.3 volt to 3.6 volt, to perform read, erase and program operations. the devices can be programmed in standard eprom programmers. the IS25LD512/010/020 are accessed through a 4-wire spi interface consisting of serial data input/output (slo), serial data output (so), serial clock (sck), and chip enable (ce#) pins. they comply with all recognized command codes and operations. the dual-outpu t fast read operation provides and effective serial data rate of 200mhz. the devices support page program mode, where 1 to 256 bytes data can be programmed into the memory in one program operation. these devices are divided into uniform 4 kbyte sectors or uniform 32 kbyte blocks.(is25ld020 is uniform 4 kbyte sectors or uniform 64 kbyte). the IS25LD512/010/020 are manufactured on pflash??s advanced non-volatile technology. the devices are offered in 8-pin soic 150mil, 8- contact wson, 8-pin vvsop, 8-pin us on and 8-pin tssop. the devices operate at wide temperatures between -40c to +105c. 512kbit/1 mbit / 2 mbit single operating voltage serial flash memory with 100 mhz dual-output spi bus
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 2 connection diagrams 5 6 7 8 1 2 3 4 vcc hold# sck sio so gnd wp# ce# pin descriptions symbol type description ce# input chip enable: ce# low activates the devices internal circuitries for device operation. ce# high deselects the devices and switches into standby mode to reduce the power consumption. when a device is not selected, data will not be accepted via t he serial input pin (slo), and the serial output pin (so) will rema in in a high impedance state. sck input serial data clock sio input/output serial data input/output so output serial data output gnd ground vcc device power supply wp# input write protect: a hardware progra m/erase protection for all or part of a memory array. when the wp# pin is low, memory array write-protection depends on the setting of bp2, bp1 and bp0 bits in the status register. when the wp# is high, the devices are not write-protected. hold# input hold: pause serial communication by the master device without resetting the serial sequence. ce# ce# so wp# gnd vcc hold# sck sio sio sck hold# vcc so wp# gnd 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 8-pin soic/vvsop 8-contact wson 8-pin tssop
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 3 block diagram sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 4 spi modes description multiple IS25LD512/010/020 devices can be connected on the spi serial bus and controlled by a spi master, i.e. microcontroller, as shown in figure 1. the devices support either of two spi modes: mode 0 (0, 0) mode 3 (1, 1) the difference between these two modes is the clock polarity when the spi master is in stand-by mode: the serial clock remains at ?0? (sck = 0) for mode 0 and the clock remains at ?1? (sck = 1) for mode 3. please refer to figure 2. for both modes, the input data is latched on the rising edge of serial clock (sck), and the output data is available from the falling edge of sck. figure 1. connection diagram among spi master and spi slaves (memory devices) figure 2. spi modes supported msb msb sck sck so sio in p ut mode mode 0 ( 0 , 0 ) mode 3 ( 1 , 1 ) spi master (i.e. microcontroller) cs3 cs2 cs1 spi memory device spi memory devic e spi memory device spi interface with (0,0) or (1,1) sdio sdi sck sck sck sck so so so sio sio sio ce# ce# ce# wp# wp# wp# hold# hold# hold# n ote : 1. th e wri te pr otect ( wp #) a n d h o l d ( h o ld #) s i g n a l s s h ou l d be d riv e n hi g h o r l o w as
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 5 system configuration the IS25LD512/010/020 devices are designed to interface directly with the synchronous serial peripheral interface (spi) of the motorola mc68hcxx series of microcontrollers or any spi interface-equipped system controllers. the devices have two superset features that can be enabled through specific software instructions and the configuration register: block no. block size (kbytes) sector no. sector size (kbytes) address range sector 0 (1) 4 000000h - 000fffh sector 1 4 001000h - 001fffh :: : sector 7 4 007000h - 007fffh sector 8 4 008000h - 008fffh sector 9 4 009000h - 009fffh :: 000000h - 006fffh sector 15 4 00f000h - 00ffffh block 2 32 " " 010000h - 017fffh block 3 32 " " 018000h - 01ffffh memory density 1 mbit 512 kbit 32 32 block 0 block 1 table 1-1. block/sector addresses of IS25LD512/010/020 memory density block no. block size (kbytes) sector no. sector size (kbytes) address range 2 mbit block 0 64 sector 0 4 000000h - 000fffh sector 1 4 001000h - 001fffh : : : sector 15 4 00f000h - 00ffffh block 1 64 sector 16 4 010000h - 010fffh sector 17 4 011000h - 011fffh : : : sector 31 4 01f000h - 01ffffh : : : : : block 3 64 : 4 030000h ? 03ffffh
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 6 registers (continued) status register refer to tables 5 and 6 for status register format and status register bit definitions. the bp0, bp1, bp2, and srwd are volatile memory cells that can be written by a write status register (wrsr) instruction. the default value of the bp2, bp1, bp0 were set to ?0? and srwd bits was set to ?0? at factory. once a ?0? or ?1 ?is written, it will not be changed by device power- up or power-down, and can only be altered by the next wrsr instruction. the status register can be read by the read status register (rdsr). refer to table 10 for instruction set. the function of status register bits are described as follows: wip bit : the write in progress (wip) bit is read-only, and can be used to detect the progress or completion of a program or erase operation. when the wip bit is ?0?, the device is ready fo r a write status register, program or erase operation. when the wip bit is ?1?, the device is busy. wel bit : the write enable latch (wel) bit indicates the status of the internal write enable latch. when the wel is ?0?, the write enable latch is disabled, and all write operations, including write status register, page program, sector erase, bloc k and chip erase operations are inhibited. when the wel bi t is ?1?, write operations are allowed. the wel bit is set by a write enable (wren) instruction. each write register, program and erase instruction must be preceded by a wren instruction. the wel bit can be reset by a write disable (wrdi) inst ruction. it will aut omatically be the reset after the completion of a write instruction. bp2, bp1, bp0 bits : the block protection (bp2, bp1, bp0) bits are used to define the portion of the memory area to be protected. refer to tables 7, 8 and 9 for the block write protection bit settings. when a defined combination of bp2, bp1 and bp0 bits are set, the corresponding memory area is protected. any program or erase operation to that area will be inhibited. note: a chip erase (chip_er) in struction is executed successfully only if all the block protection bits are set as ?0?s. srwd bit : the status register write disable (srwd) bit operates in conjunction with the write protection (wp#) signal to provide a hardware protection mode. when the srwd is set to ?0?, the status register is not write-protected. when t he srwd is set to ?1? and the wp# is pulled low (v il ), the volatile bits of status register (srwd, bp2, bp1, bp0) become read-only, and a wrsr instruction will be ignored. if the srwd is set to ?1? and wp# is pulled high (v ih ), the status register can be changed by a wrsr instruction. table 5. status register format bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 srwd1 reserved bp2 bp1 bp0 wel wip default (flash bit) 0 0 0 0 0 0 0
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 7 registers (continued) table 6. status regi ster bit definition bit name definition read- /write non-volatile bit bit 0 wip write in progress bit: "0" indicates the device is ready "1" indicates a write cycle is in progress and the device is busy r no bit 1 wel write enable latch: "0" indicates the device is not write enabled "1" indicates the device is write enabled (default) r/w no bit 2 bp0 block protection bit: (see table 7 and table 8 for details) "0" indicates the specific blocks ar e not write-protected (default) "1" indicates the specific blocks are write-protected r/w yes bit 3 bp1 bit 4 bp2 bits 5 - 6 n/a reserved: always "0"s n/a bit 7 srwd status register write disable: (see table 9 for details) "0" indicates the status register is not write-protected (default) "1" indicates the status register is write-protected r/w yes table 8. block write protec t bits for IS25LD512/010/020 status register bits protected memory area bp1 bp0 IS25LD512 a is25ld010 a is25ld020 0 0 none none none 0 1 none upper quarter (block 3) 01800h-01ffffh upper quarter (block 3) 03000h-03ffffh 1 0 none upper half (block 2 & 3) 010000h-01ffffh upper half (block 2 & 3) 020000h-03ffffh 1 1 all blocks 000000h-00ffffh all blocks 000000h-01ffffh all blocks 000000h-03ffffh
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 8 registers (continued) protection mode the IS25LD512/010/020 have two types of write- protection mechanisms: hardware and software. these are used to prevent irrelevant operation in a possibly noisy environment and protect the data integrity. hardware writ e-protection the devices provide two ha rdware write-protection features: a. when inputting a program, erase or write status register instruction, the number of clock pulse is checked to determine whether it is a multiple of eight before the executing. any incomplete instruction command sequence will be ignored. b. the write protection (wp#) pin provides a hardware write protection method for bp2, bp1, bp0 and srwd in the status register. refer to the status register description. c. write inhibit is 1.8v, all write sequence will be ignored when vcc drop to 1.8v and lower software write protection the IS25LD512/010/020 also provides two software write protection features: a. before the execution of any program, erase or write status register instruction, the write enable latch (wel) bit must be enabled by executing a write enable (wren) instruction. if the wel bit is not enabled first, the program, erase or write register instruction will be ignored. b. the block protection (bp2, bp1, bp0) bits allow part or the whole memory area to be write-protected. table 9. hardware write protection on status register srwd wp# status register 0 low writable 1 low protected 0 high writable 1 high writable
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 9 device operation the IS25LD512/010/020 utilize an 8-bit instruction register. refer to table 10 instruction set for details of the instructions and instruct ion codes. all instructions, addresses, and data are shi fted in with the most significant bit (msb) first on serial data input (si). the input data on si is latched on the rising edge of serial clock (sck) after chip enable (ce#) is driven low (v il ). every instruction sequence starts with a one-byte instruction code and is followe d by address bytes, data bytes, or both address bytes and data bytes, depending on the type of instruction. ce# must be driven high (v ih ) after the last bit of the instruction sequence has been shifted in. the timing for each instruct ion is illustrated in the following operational descriptions. table 10. instruction set instruction name hex code operation command cycle maximum frequency rdid abh read manufacturer and product id 4 bytes 100 mhz jedec id read 9fh read manufactu rer and product id by jedec id command 1 byte 100 mhz rdmdid 90h read manufacturer and device id 4 bytes 100 mhz wren 06h write enable 1 byte 100 mhz wrdi 04h write disable 1 byte 100 mhz rdsr 05h read status register 1 byte 100 mhz wrsr 01h write status register 2 bytes 100 mhz read 03h read data bytes from memo ry at normal read mode 4 bytes 33 mhz fast_read 0bh read data bytes from memory at fast read mode 5 bytes 100 mhz frdo 3bh fast read dual output 5 bytes 100 mhz page_ prog 02h page program data bytes into memory 4 bytes + 256b 50 mhz sector_er d7h/ 20h sector erase 4 bytes 100 mhz block_er d8h block erase 4 bytes 100 mhz chip_er c7h/ 60h chip erase 1 byte 100 mhz hold operation hold# is used in conjunction with ce# to select the IS25LD512/010/020. when the devices are selected and a serial sequence is underway, hold# can be used to pause the serial communication with the master device without resetting the serial sequence. to pause, hold# is brought low while the sck signal is low. to resume serial communication, hold# is brought high while the sck signal is low (sck may still toggle during hold). inputs to slo will be ignored while so is in the high impedance state.
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 10 device operation (continued) rdid command (read product identification) operation the read product identificati on (rdid) instruction is for reading out the old style of 8-bit electronic signature, whose values are shown as table of id definitions. this is not same as rdid or jedec id instruction. it?s not recommended to use for new design. for new design, please use rdid or jedec id instruction. the rdes instruction code is followed by three dummy bytes, each bit being latched-in on si during the rising edge of sck. then the device id is shifted out on so with the msb first, each bit been shifted out during the falling edge of sck. the rdes instruction is ended by ce# goes high. the device id outputs repeatedly if continuously send the additional clock cycles on sck while ce# is at low. table 11. product identification product identification data manufacturer id first byte 9dh second byte 7fh device id: device id 1 device id 2 IS25LD512 05h 20h is25ld010 10h 21h is25ld020 11h 22h figure 3. read product identification sequence 01 8 31 38 39 46 47 54 high impedance device id1 device id1 device id1 sck ce# si so instruction 9 7 1010 1011b 3 dummy bytes
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 11 device operation (continued) jedec id read command (read product identification by jedec id) operation the jedec id read instruction allows the user to read the manufacturer and product id of devices. refer to table 11 product identification for pflash manufacturer id and device id. after the jedec id read command is input, the second manufacturer id (7fh) is shifted out on so with the msb first, followed by the first manufacturer id (9dh) and the device id (22h, in the case of the is25ld020), each bit shifted out during the falling edge of sck. if ce# stays low after the last bit of the device id is shifted out, the manufacturer id and device id will loop until ce# is pulled high. figure 4. read product identification by jedec id read sequence sck ce# si instruction 1001 1111b 0 8 15 23 24 31 7 16 high impedance so device id2 manufacture id1 manufacture id2
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 12 device operation (continued) rdmdid command (read device manufacturer and device id) operation the rdmdid instruction allows the user to read the manufacturer and product id of devices. refer to table 11 product identification for pflash manufacturer id and device id. the rdmdid command is input, followed by a 24-bit address pointing to an id table. the table contains the first manufacturer id (9dh) and the device id (22h, in the case of the is25ld020), and is shifted out on so with the msb first, each bit shifted out during the falling edge of sck. if ce# stays low after the last bit of the device id is shifted out, the manufacturer id and device id will loop until ce# is pulled high. figure 5. read product identification by rdmdid read sequence
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 13 note : (1) address a0 = 0, will output the 1st manufacture id (9 dh) first -> device id1 -> 2nd manufacture id (7fh) address a0 = 1, will output the device id1 -> 1st manufacture id (9d) -> 2nd manufacture id (7fh)
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 14 device operation (continued) write enable operation the write enable (wren) instruction is used to set the write enable latch (wel) bit. the wel bit of the IS25LD512/010/020 is reset to the write ?protected state after power-up. the wel bit must be write enabled before any write operation, including sector, block erase, chip erase, page program and write status register operations. the wel bit will be reset to the write-protect state automatic ally upon completion of a write operation. the wren instruction is required before any above operation is executed. figure 6. write enable sequence wrdi command (write disable) operation the write disable (wrdi) instruction resets the wel bit and disables all write instructions. the wrdi instruction is not required a fter the execution of a write instruction, since the wel bi t is automatically reset. figure 7. write disable sequence sio sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 15 device operation (continued ) rdsr command (read status register) operation the read status register ( rdsr) instruction provides access to the status register. during the execution of a program, erase or write status register operation, all other instructions will be ignored except the rdsr instruction, which can be used to check the progress or completion of an operation by reading the wip bit of status register. figure 8. read status register sequence wrsr command (write status register) operation the write status register (wrsr) instruction allows the user to enable or disable the block protection and status register write protecti on features by writing ?0?s or ?1? s into the volatile bp2, bp1, bp0 and srwd bits. figure 9. write status register sequence sio sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 16 device operation (continued) read command (read data) operation the read data (read) instruction is used to read memory data of a IS25LD512/010/020 under normal mode running up to 33 mhz. the read instruction code is transmitted via the slo line, followed by three address bytes (a23 - a0) of the first memory location to be read. a total of 24 address bits are shifted in, but only a ms (most significant address) - a0 are decoded. the remaining bits (a23 ? a ms ) are ignored. the first byte addressed can be at any memory location. upon completion, any data on the sl will be ignored. refer to table 12 for the related address key. the first byte data (d7 - d0) addressed is then shifted out on the so line, msb first. a single byte of data, or up to the whole memory array, can be read out in one read instruction. the address is automatically incremented after each byte of data is shifted out. the read operation can be terminated at any time by driving ce# high (v ih ) after the data comes out. when the highest address of the devices is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read in one continuous read instruction. table 12. address key address is25ld020 is25ld010 IS25LD512 a n ( a ms ? a 0) a17 - a0 a16 - a0 a15 - a0 don't care bits a23 ? a18 a23 ? a17 a23 ? a16 figure 12. read data sequence sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 17 device operation (continued) fast_read command (fast read data) operation the fast_read instruction is used to read memory data at up to a 100 mhz clock. the fast_read instruction code is followed by three address bytes (a23 - a0) and a dummy byte (8 clocks), transmitted via the si line, with each bit latched-in during the rising edge of sck. then the first data byte addressed is shifted out on the so line, with each bit shifted out at a maximum frequency f ct , during the falling edge of sck. the first byte addressed can be at any memory location. the address is automatically incremented after each byte of data is shifted out. when the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single fast_read instruction. the fast_read instruction is terminated by driving ce# high (v ih ). figure 13. fast read data sequence sio sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 18 device operation (continued ) frdo command (fast read dual output) operation the frdo instruction is used to read memory data on two output pins each at up to a 100 mhz clock. the frdo instruction code is followed by three address bytes (a23 - a0) and a dummy byte (8 clocks), transmitted via the si line, with each bit latched-in during the rising edge of sck. then the first data byte addressed is shifted out on the so and sio lines, with each pair of bits shifted out at a maximum frequency f ct , during the falling edge of sck. the first bit (msb) is output on so, while simultaneously the second bit is output on sio. the first byte addressed can be at any memory location. the address is automatically incremented after each byte of data is shifted out. when the highest address is reached, the address counter will roll over to the 000000h address, allowing the entire memory to be read with a single frdo inst ruction. frdo instruction is terminated by driving ce# high (v ih ). figure 14. fast read dual-output sequence 0 1 2345 67 8 9 10 11 28 29 30 31 ... instruction = 0011 1011b ... 23 22 21 3 2 1 0 3 - byte address ce# sck sio so high impedance 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 ce# sck sio so high impedance data out 1 data out 2
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 19 device operation (continued ) page_prog command (page program) operation the page program (page_prog) instruction allows up to 256 bytes data to be programmed into memory in a single operation. the destination of the memory to be programmed must be outside the protected memory area set by the block protection (bp2, bp1, bp0) bits. a page_prog instruction whic h attempts to program into a page that is write-protected will be ignored. before the execution of page_prog instruction, the write enable latch (wel) must be enabled through a write enable (wren) instruction. the page_prog instruction code, three address bytes and program data (1 to 256 bytes) are input via the slo line. program operat ion will start immediately after the ce# is brought high, otherwise the page_prog instruction will not be executed. the internal control logic automatically handles the programming voltages and timing. during a program operation, all instructions will be ignored except the rdsr instruction. the progress or completion of the program operation can be determined by reading the wip bit in status register via a rdsr instruction. if the wip bit is ?1?, the pr ogram operation is still in progress. if wip bit is ?0?, the program operation has completed. if more than 256 bytes data are sent to a device, the address counter rolls over within the same page, the previously latched data are di scarded, and the last 256 bytes data are kept to be programmed into the page. the starting byte can be anywhere within the page. when the end of the page is reached, the address will wrap around to the beginning of the same page. if the data to be programmed are less than a full page, the data of all other bytes on the same page will remain unchanged. note: a program operation can alter ?1?s into ?0?s, but an erase operation is required to change ?0?s back to ?1?s. a byte cannot be reprogrammed without first erasing the whole sector or block. figure 15. page program sequence sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 20 device operation (continued) erase operation the memory array of the IS25LD512/010 is organized into uniform 4 kbyte sectors or 32 kbyte uniform blocks (a block consists of eight adjacent sectors). is25ld020 is organized into uniform 4 kbyte sectors or 64 kbyte uniform blocks (a block consists of sixteen adjacent sectors) before a byte can be reprogrammed, the sector or block that contains the by te must be erased (erasing sets bits to ?1?). in order to erase the devices, there are three erase instructions available: sector erase (sector_er), block erase (block_er) and chip erase (chip_er). a sector erase operation allows any individual sector to be erased without affecting the data in other sectors. a block erase operation erases any individual block. a chip erase operation erases the whole memory array of a devic e. a sector erase, block erase or chip erase operation can be executed prior to any programming operation. sector_er command (sector erase) operation a sector_er instruction er ases a 4 kbyte sector before the execution of a sector_er instruction, the write enable latch (wel) must be set via a write enable (wren) instruction. the wel bit is reset automatically after the comp letion of sector an erase operation. a sector_er instruction is entered, after ce# is pulled low to select the device and stays low during the entire instruction sequence the sector_er instruction code, and three address bytes are input via si. erase operation will start immediately after ce# is pulled high. the internal control logic automatically handles the erase voltage and timing. refer to figure 14 for sector erase sequence. during an erase operation, all instruction will be ignored except the read status register (rdsr) instruction. the progress or completion of the erase operation can be determined by reading the wip bit in the status register using a rdsr instruction. if the wip bit is ?1?, the erase oper ation is still in progress. if the wip bit is ?0?, t he erase operation has been completed. block_er command (block erase) operation a block erase (block_er) instruction erases a 64 kbyte block of the is25ld020, and 32 kbyte block of the IS25LD512c/010c. before the execution of a block_er instruction, the write enable latch (wel) must be set via a write enable (wren) instruction. the wel is reset automatically after the completion of a block erase operation. the block_er instruction code and three address bytes are input via si. er ase operation will start immediately after the ce# is pulled high, otherwise the block_er instruction will not be executed. the internal control logic automatically handles the erase voltage and timing. refer to figure 15 for block erase sequence. chip_er command (chip erase) operation a chip erase (chip_er) instruction erases the entire memory array of a IS25LD512/010/020. before the execution of chip_er instruction, the write enable latch (wel) must be set via a write enable (wren) instruction. the wel is reset automatically after completion of a chip erase operation. the chip_er instruction code is input via the si. erase operation will start immediately after ce# is pulled high, otherwise the chip_er instruction will not be executed. the internal c ontrol logic automatically handles the erase voltage and timing. refer to figure 16 for chip erase sequence.
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 21 device operation (continued) figure 16. sector erase sequence figure 17. block erase sequence figure 18. chip erase sequence sio sio sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 22 absolute maximum ratings (1) temperature under bias -65 o c to +125 o c storage temperature -65 o c to +125 o c surface mount lead soldering temperature standard package 240 o c 3 seconds lead-free package 260 o c 3 seconds input voltage with respect to ground on all pins (2) -0.5 v to vcc + 0.5 v all output voltage with respect to ground -0.5 v to vcc + 0.5 v vcc (2) -0.5 v to +6.0 v notes: 1. applied conditions greater than those listed in ?abs olute maximum ratings? may cause permanent damage to the device. this is a stress rating only. the functional operation of the device condi tions that exceed those indicated in the operational sections of this specific ation is not implied. exposure to absolute maximum rating condition for extended periods may affect device reliability. 2. maximum dc voltage on input or i/o pins is v cc + 0.5 v. during voltage transitions, input or i/o pins may overshoot v cc by + 2.0 v for a period of time not to exceed 20 ns. minimum dc voltage on input or i/o pins is -0.5 v. during voltage transitions, input or i/o pins may undershoot gnd by -2.0 v for a period of time not to exceed 20 ns. dc and ac operating range part number IS25LD512/010/020 operating temperature (extended grade) -40 o c to 105 o c operating temperature (i ndustrial grade) -40 o c to 85 o c operating temperature (aut omotive, a1 grade) -40 o c to 85 o c operating temperature (aut omotive, a2 grade) -40 o c to 105 o c operating temperature (aut omotive, a3 grade) -40 o c to 125 o c vcc power supply 2.3 v ? 3.6 v dc characteristics applicable over recommended operating range from: v cc = 2.3 v to 3.6 v (unless otherwise noted). symbol parameter condition min typ max units i cc1 vcc active read current v cc = 3.6v at 33 mhz, so = open 10 15 ma i cc2 vcc program/erase current v cc = 3.6v at 33 mhz, so = open 15 30 ma i sb1 vcc standby current cmos v cc = 3.6v, ce# = v cc 10 ? a i sb2 vcc standby current ttl v cc = 3.6v, ce# = v ih to v cc 3 ma i li input leakage current v in = 0v to v cc 1 ? a i lo output leakage current v in = 0v to v cc , t ac = 0 o c to 85 o c 1 ? a v il input low voltage -0.5 0.8 v v ih input high voltage 0.7v cc v cc + 0.3 v v ol output low voltage 2.3v < v cc < 3.6v i ol = 2.1 ma 0.45 v v oh output high voltage i oh = -100 ? a v cc - 0.2 v
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 23 ac characteristics applicable over recommended operating range from, v cc = 2.3 v to 3.6 v c l = 1 ttl gate and 10 pf (unless otherwise noted). symbol parameter min typ max units f ct clock frequency for fast read mode 0 100 mhz f c clock frequency for read mode 0 33 mhz t ri input rise time 8 ns t fi input fall time 8 ns t ckh sck high time 4 ns t ckl sck low time 4 ns t ceh ce# high time 25 ns t cs ce# setup time 10 ns t ch ce# hold time 5 ns t ds data in setup time 2 ns t dh data in hold time 2 ns t hs hold setup time 15 ns t hd hold time 15 ns t v output valid 8 ns t oh output hold time normal mode 0 ns t lz hold to output low z 200 ns t hz hold to output high z 200 ns t dis output disable time 100 ns t ec secter/block/chip erase time 10 ms t pp page program time 2 5 ms t vcs v cc set-up time 50 ? s t w write status register time (flash bit) 10 ms ?
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 24 ac characteristics (continued) serial input/output timing (1) note: 1. for spi mode 0 (0,0) sio
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 25 ac characteristics (continued) hold timing pin capacitance (f = 1 mhz, t = 25c ) typ max units conditions c in 4 6 pf v in = 0 v c out 8 12 pf v out = 0 v note: these parameters are charac terized but not 100% tested. output test load input test waveforms and measurement level
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 26
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 27 power-up and power-down at power-up and power-down, the device must not be selected (ce# must follow the voltage applied on vcc) until vcc reaches the correct value: - vcc(min) at power-up, and then for a further delay of tvce - vss at power-down usually a simple pull-up resistor on ce# can be used to insure safe and proper power-up and power-down. to avoid data corruption and inadvertent write operations during power up, a power on reset (por) circuit is included. the logic inside the device is held reset while vcc is less than the por threshold value (vwi) during power up, the device does not respond to any instruction until a time delay of tpuw has elapsed after the moment that vcc rised above the vwi threshold. however, the corre ct operation of the device is not guaranteed if, by this time, vcc is still below vcc(min). no write status register, program or erase instructions should be sent until the later of: - tpuw after vcc passed the vwi threshold - tvce after vcc passed the vcc(min) level at power-up, the device is in the following state: - the device is in the standby mode - the write enable latch (wel) bit is reset at power-down, when vcc drops from the operating voltage, to below the vwi, all write operations are disabled and the device does not respond to any write instruction. chip selection not allowed all write commands are rejected tvce read access allowed device fully accessible tpuw vcc vcc(max) vcc(min) reset state v (write inhibit) time symbol parameter min. max. unit t vce *1 vcc(min) to ce# low 10 us t puw *1 power-up time delay to write instruction 1 10 ms v wi *1 write inhibit voltage 2.1 v note : *1. these parameters are characterized only. 1 .8 1 . 6
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 28 program/erase performance parameter unit typ max remarks sector erase time ms 10 from writing erase command to erase completion block erase time ms 10 from writing erase command to erase completion chip erase time ms 10 from writing erase command to erase completion page programming time ms 2 5 from writing program command to program completion note: these parameters are characterized and are not 100% tested. reliability characteristics parameter min typ unit test method endurance 200,000 cycles jedec standard a117 data retention 20 years jedec standard a103 esd ? human body model 2,000 volts jedec standard a114 esd ? machine model 200 volts jedec standard a115 latch-up 100 + i cc1 ma jedec standard 78 note: these parameters are characterized and are not 100% tested.
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 29 package type information ` jn 8-pin jedec 150mil broad small outlin e integrated circuit (soic) package (measure in millimeters)
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 30 jd 8-pin tssop package (measu re in millimeters) pin1 4.5 0.65 4.3 6.6 6.2 3.1 2.9 0.30 0.25 1.05 1.00 1.05 1.20 0.15 0.05 8 0 0 0 0.7 0.5 0.25 gage plane detail a detail a 0.127 unit : millimeters
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 31 package type information (continued) jp 8-contact ulta-thin small ou tline no-lead (wson) package (measure in millimeters)
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 32 package type information (continued) ja
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 33 package type information (continued) jv 8-pin vvsop package 150mil
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 34
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 35 package type information (continued) ju 8-pin uson package (measu re in millimeters)
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 36 appendix1: safe guard function safe guard function is a security function fo r customer to protect by sector (4kbyte). every sector has one bit register to decide it will unde r safe guard protect or not. (?0?means protect and ?1? means not protect by safe guard.) IS25LD512 (sector 0~sector 15), is25ld010 (sector 0~sector 31) and is25ld020 (sector 0~sector 63) *safe guard function priority is hi gher than status register (bp0/1/2) mapping table for safe guard register address[9:0] d7 d6 d5 d4 d3 d2 d1 d0 sector0 000h 1 1 1 1 1 1 1 0 sector1 000h 1 1 1 1 1 1 0 1 sector2 000h 1 1 1 1 1 0 1 1 sector3 000h 1 1 1 1 0 1 1 1 sector4 000h 1 1 1 0 1 1 1 1 sector5 000h 1 1 0 1 1 1 1 1 sector6 000h 1 0 1 1 1 1 1 1 sector7 000h 0 1 1 1 1 1 1 1 sector8 001h 1 1 1 1 1 1 1 0 sector9 001h 1 1 1 1 1 1 0 1 sector10 001h 1 1 1 1 1 0 1 1 sector11 001h 1 1 1 1 0 1 1 1 sector12 001h 1 1 1 0 1 1 1 1 sector13 001h 1 1 0 1 1 1 1 1 sector14 001h 1 0 1 1 1 1 1 1 sector15 001h 0 1 1 1 1 1 1 1 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? sector56 007h 1 1 1 1 1 1 1 0 sector57 007h 1 1 1 1 1 1 0 1 sector58 007h 1 1 1 1 1 0 1 1 sector59 007h 1 1 1 1 0 1 1 1 sector60 007h 1 1 1 0 1 1 1 1 sector61 007h 1 1 0 1 1 1 1 1 sector62 007h 1 0 1 1 1 1 1 1 sector63 007h 0 1 1 1 1 1 1 1 chip erase disable* 008h 0 0 0 0 0 0 0 0 note:1. please set the chip erase disable to "0" after finished the register setting. 2. please set the address 009h to "00" after finished the register setting.
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 37 read safe guard register the read safe guard instruction code is transmitted via the slo line, followed by three address bytes (a23 - a0) of the first register location to be read. the first byte data (d7 - d0) addressed is then shifted out on the so line, msb first. the address is automatically incremented after each byte of data is shifted out. the read operation can be terminated at any time by driving ce# high (v ih ) after the data comes out. fig a. timing waveform of read safe guard register erase safe guard register if we want to erase the safe guard register to let the flash into unprotect status, it needs five continuous instructions. if any instruction is wrong, the erase comm and will be ignored. erase wait time follow product erase timing spec. fig b. shows the complete steps for erase safe guard register. program safe guard register if we want to erase the safe guard register to let the flash into unprotect status, it needs five continuous instructions. if any instruction is wron g, the program command will be ignored. the program safe guard instruction allows up to 256 bytes data to be programmed into memory in a single operation. program wait time follow product program timing spec. fig c. shows the complete steps for program safe guard register. cs sck si 12 78 2fh 910 2324 a23-a0 25 26 31 32 d7-d0 d7-d0 33 34 39 40 so 41 42 47 48 1 s t by te 2 n d by te
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 38 fig b. erase safe guard register
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 39 fig c. program safe guard register 1 s t byte 2nd b y te
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 40 appendix2: sector unlock function instruction name hex code operation command cycle maximum frequency sect_unlock 26h sector unlock 4 bytes 100 mhz sect_lock 24h sector lock 1 byte 100 mhz sec_unlock command operation the sector unlock command allows the user to select a specific sector to allow program and erase operations. this instruct ion is effective when the blocks are designated as write-protected through the bp0, bp1 and bp2 bits in the status register. only one sector can be enabled at any time. to enable a different sector, a previously enabled sector must be disabled by executing a sector lock command. the instruction code is followed by a 24-bit address specifying the target sector, but a0 through a11 are not decoded. the remaining sectors within the same block remain in read-only mode. figure d. sector unlock sequence note: 1.if the clock number will not match 8 clocks(c ommand)+ 24 clocks (add ress), it will be ignored. 2.it must be executed write enabl e (06h) before sector unlock instructions.
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 41 sect_lock command operation the sector lock command reverses the function of the sector unlock command. the instruction code does not require an address to be specified, as only one sector can be enabled at a time. the remaining sectors within the same block remain in read-only mode. figure e. sector lock sequence
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 42 product ordering information is25ld*** - jn l e temperature range e = extended grade (-40c to +105c) i = industrial grade (-40c to +85c) a1 = automotive, a1 gr ade (-40c to +85c) a2 = automotive, a2 grade (-40c to +105c) a3 = automotive, a3 grade (-40c to +125c) environmental attribute l = lead-free (pb-free) package package type jn = 8-pin soic 150mil jp = 8-pin wson jd = 8-pin tssop jv = 8-pin vvsop 150mil ju = 8-pin uson device number IS25LD512/010/020
IS25LD512/010/020 integrated silicon solution, inc.- www.issi.com rev. a 08/09/2012 43 ordering information: density frequency (mhz) order part number package 512k 100 IS25LD512-jnle 8-pin soic 150mil IS25LD512-jple 8-pin wson IS25LD512-jdle 8-pin tssop IS25LD512-jvle 8-pin vvsop 150mil IS25LD512-jule 8-pin uson IS25LD512-jnli 8-pin soic 150mil IS25LD512-jpli 8-pin wson IS25LD512-jdli 8-pin tssop IS25LD512-jvli 8-pin vvsop 150mil IS25LD512-juli 8-pin uson IS25LD512-jnla1 8-pin soic 150mil IS25LD512-jpla1 8-pin wson IS25LD512-jdla1 8-pin tssop IS25LD512-jvla1 8-pin vvsop 150mil IS25LD512-jula1 8-pin uson IS25LD512-jnla2 8-pin soic 150mil IS25LD512-jpla2 8-pin wson IS25LD512-jdla2 8-pin tssop IS25LD512-jvla2 8-pin vvsop 150mil IS25LD512-jula2 8-pin uson 1mb 100 is25ld010-jnle 8-pin soic 150mil is25ld010-jple 8-pin wson is25ld010-jdle 8-pin tssop is25ld010-jvle 8-pin vvsop 150mil is25ld010-jnli 8-pin soic 150mil is25ld010-jpli 8-pin wson is25ld010-jdli 8-pin tssop is25ld010-jvli 8-pin vvsop 150mil is25ld010-jnla1 8-pin soic 150mil is25ld010-jpla1 8-pin wson is25ld010-jdla1 8-pin tssop is25ld010-jvla1 8-pin vvsop 150mil is25ld010-jnla2 8-pin soic 150mil is25ld010-jpla2 8-pin wson is25ld010-jdla2 8-pin tssop is25ld010-jvla2 8-pin vvsop 150mil 2mb 100 is25ld020-jnle 8s 150mil soic is25ld020-jple 8k wson (back side metal) is25ld020-jdle 8-pin tssop is25ld020-jvle 8-pin vvsop 150mil is25ld020-jnli 8s 150mil soic is25ld020-jpli 8k wson (back side metal) is25ld020-jdli 8-pin tssop is25ld020-jvli 8-pin vvsop 150mil is25ld020-jnla1 8s 150mil soic is25ld020-jpla1 8k wson (back side metal) is25ld020-jdla1 8-pin tssop is25ld020-jvla1 8-pin vvsop 150mil is25ld020-jnla2 8s 150mil soic is25ld020-jpla2 8k wson (back side metal) is25ld020-jdla2 8-pin tssop is25ld020-jvla2 8-pin vvsop 150mil

▲Up To Search▲

Price & Availability of IS25LD512

	To Download IS25LD512 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .